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NTMFS4708N
2000
1800
V DS = 0 V
V GS = 0 V
T J = 25 ° C
5
Q T
1600
C ISS
4
1400
1200
C ISS
3
Q gs
Q gd
1000
800
C RSS
C OSS
2
600
400
1
200
0
C RSS
0
I D = 11.5 A
T J = 25 ° C
10
5
0
5
10
15
20
25
0
2
4
6
8
10
V GS
V DS
Q g , TOTAL GATE CHARGE (nC)
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
100
7
Figure 8. Gate-to-Source and
Drain-to-Source Voltage versus Total Charge
V DD = 15 V
I D = 1 A
6
V GS = 0 V
T J = 25 ° C
V GS = 4.5 V
5
10
t f
t d(off)
t d(on)
t r
4
3
2
1
1
0
1
10
100
0.2
0.5
0.8
1000
R G , GATE RESISTANCE ( W )
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
350
V SD , SOURCE-TO-DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus
Current
V GS = 2.0 V
SINGLE PULSE
100 T C = 25 ° C
10 m s
300
250
I D = 7 A
10
1
100 m s
1 ms
10 m s
200
150
100
0.1
0.01
RDS(on) LIMIT
Thermal Limit
Package Limit
dc
50
0
0.1
1
10
100
25
50
75
100
125
150
V DS , DRAIN-TO-SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
4
T J , STARTING JUNCTION TEMPERATURE ( ° C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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